TiAlN Films Deposited by Unbalanced Magnetron Sputtering-钨钼稀土标准知识网

TiAlN Films Deposited by Unbalanced Magnetron Sputtering

TiAlN films were deposited on the cemented carbide substrates by unbalanced magnetron sputtering. The oxidation experiments of the samples were done from 400℃ to 800℃ , and the phase, fracture morphology and oxidation weight gain of TiAlN films were investigated by XRD, SEM, precision electronic balance and so on.